3VD212800YL hangzhou?silan?microelectronics?co.,ltd rev:1.0??????2008.05.30 http:?www.silan.com.cn???????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?1?of?1 3VD212800YL?high?voltage?mosfet?chips description ? ? 3VD212800YL?is?a?high?voltage?n-channel enhancement?mode?power?mos-fet?chip?fabricated in?advanced?silicon?epitaxial?planar?technology. ? ? advanced?termination?scheme?to?provide?enhanced voltage-blocking?capability. ? ? avalanche?energy?specified ? ? source-to-drain?diode?recovery?time?comparable?to a?discrete?fast?recovery?diode ? ? the?chips?may?packaged?in?to-220?type?and?the typical?equivalent?product?is?1n80. ? ? the?packaged?product?is?widely?used?in?ac-dc power?suppliers,?dc-dc?converters?and?h-bridge pwm?motor?drivers. ? ? die?size:?2.12mm*2.02mm. ? ? chip?thickness:?30020 m m. ? top?metal?:?al,??backside?metal?:?ag. pad 1: gate pad 3: source 1 3 chip?topography absolute?maximum?ratings??(t amb =25 c) parameter symbol ratings unit drain-source?voltage v ds 800 v gate-source?voltage v gs 30 v drain?current i d 1.0 a power?dissipation?(to-220?package) p d 45 w operation?junction?temperature t j -55 +150 c storage?temperature tstg -55 +150 c electrical?characteristics?(t amb =25 c) parameter symbol test?conditions min typ max unit drain?-source?breakdown?voltage b vdss v gs =0v,?i d =250 a 800 - - v gate?threshold?voltage v th v gs =?v ds ,?i d =250a 3 - 4.5 v drain-source?leakage?current i dss v ds =800v,?v gs =0v - - 1 a static?drain-?source?on?state resistance r ds(on) v gs =10v,?i d =0.5a - - 16 w gate-source?leakage?current i gss ?v gs =20v,?v ds =0v - - 10 a source-drain?diode?forward?on voltage v fsd ?i s =1a,??v gs =0v - - 1.6 v
|
